Intel’s disclosures include new materials research that enhances gate-all-around (GAA) transistor scaling and performance both with silicon and with atomically-thin 2D transistors that use ...

Image Credit: ShutterStock/artbase. In the realm of electronic devices, particularly in the domain of memory devices, significant research has centered around non-volatile floating gate ...

Applied extends 2D EUV logic scaling with Stensar™ CVD alternative to spin-on patterning filmsPreviews broadest portfolio of technologies for 3D Gate-All-Around transistors including two new IMS ...

For reference, Micron's current floating-gate NAND offers 96 layers, its previous generation of replacement-gate NAND offered 128, and Western Digital's BiCS5 3D NAND process offers 112 layers.