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The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device ...
In this letter, a dual-band (DB) class-F harmonic termination structure is proposed for designing a DB high-efficiency rectifier at two highly spaced separate frequency bands, that is, 2.45 and 5.8 ...
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