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In this study, we provide an insight into the polarization switching behavior of HfO2-based ferroelectric field-effect transistors (FeFETs) by utilizing the Landau-Ginzburg-Devonshire model in the ...

Abstract: A through-plastic-via (TPV) three-dimensional (3D) integration approach is developed to integrate the organic field effect transistor (OFET) circuitry and the sensing/reference electrodes ...