Challenges faced by the MOSFETs by scaling down further and further has led to the consideration of novel device (Ambipolar CNTFET) in which channel is intrinsic and has Schottky barrier contacts.

The proposed B+HCCES TRNG module generates random numbers based on the race hazard and jitter of braided and cross-coupled combinational logic gates. The B+HCCES architecture has been designed using ...