This letter proposes a sensitive data labeling method for the automated design and optimization of a W-band via-hole vertical transition structure. First, the dynamic thresholds are introduced to ...

Prior work has demonstrated a new process utilizing room-temperature liquid metal, Galinstan, as an interconnect material for flip-chip bonding. This interconnect forms a flexible bond between chips ...

Catalyst-free, direct heteroepitaxial growth of vertical InAs nanowires on Si(111) substrates was accomplished over a large area by metal−organic chemical vapor deposition. Nanowires showed very ...