A double-sided 1200-V/600-A multichip half-bridge insulated gate bipolar transistor (IGBT) module was fabricated utilizing molybdenum as stress-relief buffer and sintered nanosilver as die-attachment.

Advanced packaging solutions for wide bandgap power devices, such as silicon carbide (SiC) MOSFETs, can help realize their full potential. Additively printed electronics present a promising solution ...