For wide variety of IoT applications, low power memory devices are desirable. This paper proposed 6T, 8T and 10T SRAM cells in 180nm CMOS technology, along with layout, parasitic extraction, pre and ...

In this paper, the timing performance and power dissipation of 6T static random-access memory (SRAM) cell for different technology nodes are observed, and the impact of varying supply voltage on each ...