In this article, the influence of Forming Gas Annealing (FGA) on the Positive Bias Temperature Instability (PBTI) characteristics of n-vertical C-shaped-channel nanosheet FET (n-VCNFET) is studied.

We can further simplify this plot by first normalizing the dataset (i.e. scaling all feature values between 0 and 1) and then plotting a parallel plot. Here is an article with a short, yet insightful, ...